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Effect of the laser pulse illumination on charge collection efficiency in radiation detectors.
Betušiak, Marián ; Belas, Eduard (advisor)
The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.
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Electrical and optical properties of SiC single crystals
Brynza, Mykola ; Belas, Eduard (advisor)
Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.
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Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors
Musiienko, Artem ; Grill, Roman (advisor) ; Dubecký, František (referee) ; Oswald, Jiří (referee)
Title: Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors Author: Artem Musiienko Department / Institute: Institute of Physics, Faculty of Mathematics and Physics, Charles University Supervisor of the doctoral thesis: Prof. RNDr. Roman Grill, CSc, Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: Cadmium Telluride, Cadmium Zinc Telluride, and Cadmium Manganese Telluride are important semiconductors with applications in radiation detection, solar cells, and electro-optic modulators. Their electrical and optical properties are principally controlled by defects forming energy levels within the bandgap. Such defects create recombination and trapping centers capturing photo- created carriers and depreciating the performance of the detector. Simultaneously, the changed occupancy of levels leads to the charging of detector's bulk, which results in the screening of applied bias and the loss of detector's sensitivity. Detailed knowledge of crystal defect structure is thus necessary for the predictable detector work and also for the possibility to reduce the structural defects concentration. This thesis reports on the investigation of deep energy levels in CdTe-based high resistivity and detector-grade materials by...
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Electrical and optical properties of SiC single crystals
Brynza, Mykola ; Belas, Eduard (advisor) ; Štekl, Ivan (referee)
Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.
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Effect of the laser pulse illumination on charge collection efficiency in radiation detectors.
Betušiak, Marián ; Belas, Eduard (advisor) ; Oswald, Jiří (referee)
The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.
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Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors
Musiienko, Artem ; Grill, Roman (advisor)
Title: Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors Author: Artem Musiienko Department / Institute: Institute of Physics, Faculty of Mathematics and Physics, Charles University Supervisor of the doctoral thesis: Prof. RNDr. Roman Grill, CSc, Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: Cadmium Telluride, Cadmium Zinc Telluride, and Cadmium Manganese Telluride are important semiconductors with applications in radiation detection, solar cells, and electro-optic modulators. Their electrical and optical properties are principally controlled by defects forming energy levels within the bandgap. Such defects create recombination and trapping centers capturing photo- created carriers and depreciating the performance of the detector. Simultaneously, the changed occupancy of levels leads to the charging of detector's bulk, which results in the screening of applied bias and the loss of detector's sensitivity. Detailed knowledge of crystal defect structure is thus necessary for the predictable detector work and also for the possibility to reduce the structural defects concentration. This thesis reports on the investigation of deep energy levels in CdTe-based high resistivity and detector-grade materials by...
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Effect of the laser pulse illumination on charge collection efficiency in radiation detectors.
Betušiak, Marián ; Belas, Eduard (advisor) ; Oswald, Jiří (referee)
The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.
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Electrical and optical properties of SiC single crystals
Brynza, Mykola ; Belas, Eduard (advisor) ; Štekl, Ivan (referee)
Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors.
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Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors
Musiienko, Artem ; Grill, Roman (advisor)
Title: Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors Author: Artem Musiienko Department / Institute: Institute of Physics, Faculty of Mathematics and Physics, Charles University Supervisor of the doctoral thesis: Prof. RNDr. Roman Grill, CSc, Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: Cadmium Telluride, Cadmium Zinc Telluride, and Cadmium Manganese Telluride are important semiconductors with applications in radiation detection, solar cells, and electro-optic modulators. Their electrical and optical properties are principally controlled by defects forming energy levels within the bandgap. Such defects create recombination and trapping centers capturing photo- created carriers and depreciating the performance of the detector. Simultaneously, the changed occupancy of levels leads to the charging of detector's bulk, which results in the screening of applied bias and the loss of detector's sensitivity. Detailed knowledge of crystal defect structure is thus necessary for the predictable detector work and also for the possibility to reduce the structural defects concentration. This thesis reports on the investigation of deep energy levels in CdTe-based high resistivity and detector-grade materials by...
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Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors
Musiienko, Artem ; Grill, Roman (advisor) ; Dubecký, František (referee) ; Oswald, Jiří (referee)
Title: Photo-Hall effect spectroscopy and laser-induced transient currents in CdTe-based semiconductor radiation detectors Author: Artem Musiienko Department / Institute: Institute of Physics, Faculty of Mathematics and Physics, Charles University Supervisor of the doctoral thesis: Prof. RNDr. Roman Grill, CSc, Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: Cadmium Telluride, Cadmium Zinc Telluride, and Cadmium Manganese Telluride are important semiconductors with applications in radiation detection, solar cells, and electro-optic modulators. Their electrical and optical properties are principally controlled by defects forming energy levels within the bandgap. Such defects create recombination and trapping centers capturing photo- created carriers and depreciating the performance of the detector. Simultaneously, the changed occupancy of levels leads to the charging of detector's bulk, which results in the screening of applied bias and the loss of detector's sensitivity. Detailed knowledge of crystal defect structure is thus necessary for the predictable detector work and also for the possibility to reduce the structural defects concentration. This thesis reports on the investigation of deep energy levels in CdTe-based high resistivity and detector-grade materials by...
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